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| MDD 255 High Power Diode Modules VRSM VDSM V 1300 1500 1700 1900 2100 2300 Symbol IFRMS IFAVM IFSM VRRM VDRM V 1200 1400 1600 1800 2000 2200 MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 MDD 255-20N1 MDD 255-22N1 Maximum Ratings 450 270 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 9500 10200 8400 9000 451 000 437 000 353 000 340 000 -40...+150 150 -40...+125 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s 3000 3600 A A A A A A A2s A2s A2s A2s C C C V~ V~ Type 3 1 2 IFRMS = 2x 450 A IFAVM = 2x 270 A VRRM = 1200-2200 V 3 2 1 Test Conditions TVJ = TVJM TC = 100C; 180 sine TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 Features International standard package Direct copper bonded Al2O3-ceramic with copper base plate Planar passivated chips Isolation voltage 3600 V~ UL registered E 72873 q q q q q oi2dt TVJ = 45C VR = 0 TVJ = TVJM VR = 0 Applications Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies q q q q TVJ TVJM Tstg VISOL Md Weight Symbol IRRM VF VT0 rT RthJC RthJK QS IRM dS dA a q q q Advantages Simple mounting Improved temperature and power cycling Reduced protection circuits Mounting torque (M6) Terminal connection torque (M8) Typical including screws Test Conditions TVJ = TVJM; VR = VRRM IF = 600 A; TVJ = 25C For power-loss calculations only TVJ = TVJM per diode; DC current per module per diode; DC current per module other values see MCC 255 4.5-7/40-62 Nm/lb.in. 11-13/97-115 Nm/lb.in. 750 g Characteristic Values 30 mA 1.4 0.8 0.6 0.140 0.07 0.18 0.09 700 260 12.7 9.6 50 V V mW K/W K/W K/W K/W mC A mm mm m/s2 Dimensions in mm (1 mm = 0.0394") M8x20 TVJ = 125C; IF = 400 A; -di/dt = 50 A/ms Creeping distance on surface Creepage distance in air Maximum allowable acceleration (c) 2000 IXYS All rights reserved 1-3 749 Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions MDD 255 10000 106 It 2 IFSM A 50 Hz 80 % VRRM TVJ = 45C TVJ = 150C VR = 0V A2s 500 A 450 8000 IFAVM 400 350 300 DC 180 sin 120 60 30 6000 TVJ = 45C 4000 250 200 TVJ = 150C 150 2000 100 50 0 0.001 10 0.01 0.1 5 0 1 t ms 10 0 25 50 75 100 TC s t 1 125 C 150 Fig. 1 Surge overload current IFSM: Crest value, t: duration 500 Ptot W 400 Fig. 2 I2t versus time (1-10 ms) Fig. 3 Maximum forward current at case temperature Fig. 4 Power dissipation versus forward current and ambient temperature (per diode) RthKA K/W 300 DC 180 sin 120 60 30 0.1 0.2 0.3 0.4 0.6 0.8 1.2 200 100 0 0 100 200 300 400 A IFAVM 0 25 50 75 100 125 C TA 150 1500 Ptot W 1250 R 1000 L RthKA K/W 0.06 0.08 0.1 0.15 0.2 0.3 0.5 Fig. 5 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load 750 Circuit B2U 2 x MDD255 500 250 0 0 100 200 300 400 500 A IdAVM 0 25 50 75 100 C 125 TA 150 (c) 2000 IXYS All rights reserved 2-3 808 MDD 255 2500 W Ptot 2000 RthKA K/W 1500 0.03 0.06 0.1 0.15 0.2 0.3 0.4 Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 1000 Circuit B6U 3 x MDD255 500 0 0 200 400 600 800 A IdAVM 0 25 50 75 100 125 C 150 TA 0.25 K/W 0.20 ZthJC 0.15 Fig. 7 Transient thermal impedance junction to case (per diode) RthJC for various conduction angles d: d DC 180 120 60 30 RthJC (K/W) 0.139 0.148 0.156 0.176 0.214 0.10 30 60 120 180 DC 0.05 Constants for ZthJC calculation: i Rthi (K/W) 0.0066 0.0358 0.0831 0.0129 ti (s) 0.00054 0.098 0.54 12 1 2 3 4 0.00 10-3 10-2 10-1 100 101 t s 102 0.30 K/W 0.25 ZthJK 0.20 Fig. 8 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d DC 180 120 60 30 RthJK (K/W) 0.179 0.188 0.196 0.216 0.254 0.15 30 60 120 180 DC 0.10 0.05 Constants for ZthJK calculation: i Rthi (K/W) 0.0066 0.0358 0.0831 0.0129 0.04 ti (s) 0.00054 0.098 0.54 12 12 808 0.00 10-3 10-2 10-1 100 101 t s 102 1 2 3 4 5 (c) 2000 IXYS All rights reserved 3-3 |
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